® WON-TOP ELECTRONICS MBRS230L – MBRS2100L 2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features Very Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss Fast Switching Ideally Suited for Use in High Frequency A SMPS, Inverter.
Very Low Forward Voltage
Epitaxial Construction with Oxide Passivation
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 50A Peak
Low Power Loss
Fast Switching
Ideally Suited for Use in High Frequency
A
SMPS, Inverters and As Free Wheeling Diodes
C
B
F
HG E
D
Mechanical Data
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Device Code, See Page 3
Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRS260 |
Sunmate |
SURFACE MOUNT SCHOTTKY BARRIER DIODES | |
2 | MBRS260G |
American First Semiconductor |
(MBRS220G - MBRS2100G) 2.0A Surface Mount Schottky Barrier Rectifiers | |
3 | MBRS260T3 |
ON Semiconductor |
Surface Mount Schottky Power Rectifier | |
4 | MBRS260T3G |
ON Semiconductor |
Surface Mount Schottky Power Rectifier | |
5 | MBRS20100CT |
JGD |
Dual Common Cathode Schottky Rectifiers | |
6 | MBRS20100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
7 | MBRS20100CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
8 | MBRS20150CT |
JGD |
Dual Common Cathode Schottky Rectifiers | |
9 | MBRS20150CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
10 | MBRS20150CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
11 | MBRS20200CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
12 | MBRS2035CT |
JGD |
Dual Common Cathode Schottky Rectifiers |