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MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity prot.
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
http://onsemi.com
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Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds A.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MBRS260T3G |
ON Semiconductor |
Surface Mount Schottky Power Rectifier |
|
| 2 | MBRS260 |
Sunmate |
SURFACE MOUNT SCHOTTKY BARRIER DIODES |
|
| 3 | MBRS260G |
American First Semiconductor |
(MBRS220G - MBRS2100G) 2.0A Surface Mount Schottky Barrier Rectifiers |
|
| 4 | MBRS260L |
WON-TOP |
2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE |
|
| 5 | MBRS20100CT |
JGD |
Dual Common Cathode Schottky Rectifiers |
|
| 6 | MBRS20100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 7 | MBRS20100CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 8 | MBRS20150CT |
JGD |
Dual Common Cathode Schottky Rectifiers |
|
| 9 | MBRS20150CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 10 | MBRS20150CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 11 | MBRS20200CT-Y |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 12 | MBRS2035CT |
JGD |
Dual Common Cathode Schottky Rectifiers |
|