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MBR40060CT - GeneSiC

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MBR40060CT Silicon Power Schottky Diode

Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR40045CT(R) MBR40060CT(R) MBR40080.

Features


• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to.

The same part from a different manufacturer

Datasheet MBR40060CT - Naina Semiconductor MBR40060CT

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U.

Datasheet MBR40060CT - Micro Commercial Components MBR40060CT

MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %  .

Datasheet MBR40060CT - America Semiconductor MBR40060CT

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

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