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MBR40060CTR - Naina Semiconductor

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MBR40060CTR (MBR40045CT - MBR400100CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average.

Features





• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A I.

The same part from a different manufacturer

Datasheet MBR40060CTR - GeneSiC MBR40060CTR

Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR40.

Datasheet MBR40060CTR - America Semiconductor MBR40060CTR

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

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