MBR40060CT |
Part Number | MBR40060CT |
Manufacturer | Naina Semiconductor |
Description | Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN... |
Features |
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A I... |
Document |
MBR40060CT Data Sheet
PDF 184.93KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MBR40060CT |
GeneSiC |
Silicon Power Schottky Diode | |
2 | MBR40060CT |
Micro Commercial Components |
400 Amp Rectifier 20 to 100 Volts Schottky Barrier | |
3 | MBR40060CT |
America Semiconductor |
Silicon Power Schottky Diode | |
4 | MBR40060CTR |
GeneSiC |
Silicon Power Schottky Diode | |
5 | MBR40060CTR |
Naina Semiconductor |
(MBR40045CT - MBR400100CTR) Schottky Power Diode |