MBQ75T65PEH - MagnaChip

MBQ75T65PEH N-channel MOSFET

Features This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.  High ruggedness for motor control  VCE(sat) positive temperature coefficient  Very soft, fast recovery anti-parallel diode  Low EMI  Maximum junction temperature 175°C Applications  PV.

Features

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
 High ruggedness for motor control
 VCE(sat) positive temperature coefficient
 Very soft, fast recovery anti-parallel diode
 Low EMI
 Maximum junction temperature 175°C Applications
 PV Inverter
 UPS Power
 Welder TO-247 G C E Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Diode forward current, limited by Tvjmax Diode pulsed current, tp.