This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 Features High Speed Switching & Low Power Loss VCE(sat) = 2.0V @ IC = 40A High Input Impedance trr = 100ns (typ.) Applications .
High Speed Switching & Low Power Loss
VCE(sat) = 2.0V @ IC = 40A
High Input Impedance
trr = 100ns (typ.)
Applications
PFC
UPS
Inverter
G C E
Absolute Maximum Ratings
Characteristics Collector-emitter voltage Gate-emitter voltage
Collector current
Pulsed collector current, pulse time limited by Tjmax Diode forward current @ TC = 100°C Diode pulsed current, Pulse time limited by Tjmax
Power dissipation
Short circuit withstand time VCE = 600V, VGE = 15V, TC = 150°C Allowed number of short circuit < 1000 Time between short circuits ≥ 1.0s Operating Junction and storage temperature.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBQ40T120FES |
MagnaChip |
High speed FieldStop Trench IGBT | |
2 | MBQ40T120QESTH |
MagnaChip |
IGBT | |
3 | MBQ40T65FDSC |
MagnaChip |
650V Field Stop IGBT | |
4 | MBQ40T65FESC |
MagnaChip |
IGBT | |
5 | MBQ40T65QES |
MagnaChip |
IGBT | |
6 | MBQ25T120FESC |
MagnaChip |
IGBT | |
7 | MBQ50T65FESC |
MagnaChip |
IGBT | |
8 | MBQ60T65PES |
MagnaChip |
High Speed Fieldstop Trench IGBT | |
9 | MBQ75T65PEH |
MagnaChip |
N-channel MOSFET | |
10 | MB-1205N |
ETC |
DC/AC INVERTER | |
11 | MB-128 |
Miklo |
AVR Minimodules | |
12 | MB-TFT-35-S4-S |
WinCom |
Suitable for cell phone application the Main LCD adopts one backlight |