MBQ40T65FDSC - MagnaChip

MBQ40T65FDSC 650V Field Stop IGBT

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ40T65FDSC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.95V @ IC = 40A  Eoff = 0.35mJ @ TC = 25°C  High Input.

Features

 High Speed Switching & Low Power Loss
 VCE(sat) = 1.95V @ IC = 40A
 Eoff = 0.35mJ @ TC = 25°C
 High Input Impedance
 trr = 80ns (typ.) @diF/dt = 1000A/ μs
 Maximum junction temperature 175°C Applications
 PFC
 UPS
 PV Inverter
 Welder
 IH Cooker GC E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tjvjmax Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C Diode forward current limited by Tvjmax TC=25°C TC=100°C Diode pulsed current, tp limited by Tvjmax Gate-emitter.