MBM29F016A-12 - Fujitsu

MBM29F016A-12 16M (2M x 8) BIT FLASH MEMORY

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20844-4E MBM29F016A-70/-90/-12 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 48-pin TSOP(I) (Pa.

Features

• Single 5.0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection
• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
• Minimum 100,000 write/erase cycles
• High performance 70 ns maximum access time
• Sector erase architecture Uniform sectors of 64 K bytes each Any combination of sectors can be erased. Also supports full chip erase.
• Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or .