MBM29F016A-12 |
Part Number | MBM29F016A-12 |
Manufacturer | Fujitsu |
Description | FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20844-4E MBM29F016A-70/-90/-12 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • ... |
Features |
• Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) • Minimum 100,000 write/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Uniform sectors of 64 K bytes each Any combination of sectors can be erased. Also supports full chip erase. • Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or ... |
Document |
MBM29F016A-12 Data Sheet
PDF 458.13KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MBM29F016A-70 |
Fujitsu |
16M (2M x 8) BIT FLASH MEMORY | |
2 | MBM29F016A-90 |
Fujitsu |
16M (2M x 8) BIT FLASH MEMORY | |
3 | MBM29F016A |
Fujitsu Media Devices |
16M (2M x 8) BIT FLASH MEMORY | |
4 | MBM29F017A |
Fujitsu Media Devices |
16M (2M x 8) BIT FLASH MEMORY | |
5 | MBM29F017A-12 |
Fujitsu |
16M (2M x 8) BIT FLASH MEMORY |