FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 2M (256K × 8) BIT DS05-20868-3E MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protec.
• Single 5.0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection
• 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) 32-pin PLCC (Package Suffix: PD)
• Minimum 100,000 write/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes Any combination of sectors can be erased. Also supports full chip erase
• Boot Code Sector A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBM29F002BC-55 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
2 | MBM29F002BC-70 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
3 | MBM29F002BC |
Fujitsu Media Devices |
2M (256K X 8) BIT | |
4 | MBM29F002TC |
Fujitsu Media Devices |
2M (256K x 8) BIT FLASH MEMORY | |
5 | MBM29F002TC-55 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
6 | MBM29F002TC-70 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
7 | MBM29F002TC-90 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
8 | MBM29F004BC |
Fujitsu Media Devices |
FLASH MEMORY CMOS 4M (512K x 8) BIT | |
9 | MBM29F004BC-70 |
Fujitsu |
FLASH MEMORY CMOS 4M (512K x 8) BIT | |
10 | MBM29F004BC-90 |
Fujitsu |
FLASH MEMORY CMOS 4M (512K x 8) BIT | |
11 | MBM29F004TC |
Fujitsu Media Devices |
(MBM29F004BC/TC) FLASH MEMORY CMOS 4 M (512 K X 8) BIT | |
12 | MBM29F004TC-70 |
Fujitsu |
FLASH MEMORY CMOS 4M (512K x 8) BIT |