The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile m.
• Bit configuration
: 8,192 words × 8 bits
• Two-wire serial interface
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency
: 1 MHz (Max)
• Read/write endurance
: 1012 times / byte
• Data retention
: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption
: Operating power supply current 250 μA (Typ @1 MHz)
Standby current 5 μA (Typ)
• Operation ambient temperature range : − 40 °C to + 85 °C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
RoHS complia.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MB85RC64 |
Fujitsu |
64 K (8 K x 8) Bit I2C | |
2 | MB85RC64TA |
Fujitsu |
64K (8K x 8) Bit I2C | |
3 | MB85RC04V |
Fujitsu |
4K (512 x 8) Bit I2C | |
4 | MB85RC128 |
Fujitsu |
128 K (16 K x 8) Bit I2C | |
5 | MB85RC16 |
Fujitsu |
16 K (2 K x 8) Bit I2C | |
6 | MB85RC16V |
Fujitsu |
16K (2K x 8) Bit I2C | |
7 | MB85RC256V |
Fujitsu |
256K (32K x 8)Bit I2C | |
8 | MB85R1001 |
Fujitsu Media Devices |
1 M Bit (128 K X 8) | |
9 | MB85R1001A |
Fujitsu |
1 M Bit (128 K x 8) | |
10 | MB85R1002 |
Fujitsu Media Devices |
Memory FRAM | |
11 | MB85R1002A |
Fujitsu |
1 M Bit (64 K x 16) | |
12 | MB85R2001 |
Fujitsu |
Memory FRAM CMOS |