The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RC128 adopts the two-wire serial interface. Unlike SRAM, the MB85RC128 is able to retain data without using a da.
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• Bit configuration : 16,384 words × 8 bits Operating power supply voltage : 2.7 V to 3.6 V Operating frequency : 400 kHz (Max) Two-wire serial interface : I2C-bus specification ver. 2.1 compliant, supports Standard-mode/ Fast-mode. Fully controllable by two ports: serial clock (SCL) and serial data (SDA). Operating temperature range : − 40 °C to +85 °C Data retention : 10 years ( + 75 °C) Read/write endurance : 1010 times Package : Plastic / SOP, 8-pin (FPT-8P-M02) Low power consumption : Operating current 0.15 mA (Max: @400 kHz), Standby current 5 μA (Typ)
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MB85RC16 |
Fujitsu |
16 K (2 K x 8) Bit I2C | |
2 | MB85RC16V |
Fujitsu |
16K (2K x 8) Bit I2C | |
3 | MB85RC04V |
Fujitsu |
4K (512 x 8) Bit I2C | |
4 | MB85RC256V |
Fujitsu |
256K (32K x 8)Bit I2C | |
5 | MB85RC64 |
Fujitsu |
64 K (8 K x 8) Bit I2C | |
6 | MB85RC64A |
Fujitsu |
64K (8K x 8) Bit I2C | |
7 | MB85RC64TA |
Fujitsu |
64K (8K x 8) Bit I2C | |
8 | MB85R1001 |
Fujitsu Media Devices |
1 M Bit (128 K X 8) | |
9 | MB85R1001A |
Fujitsu |
1 M Bit (128 K x 8) | |
10 | MB85R1002 |
Fujitsu Media Devices |
Memory FRAM | |
11 | MB85R1002A |
Fujitsu |
1 M Bit (64 K x 16) | |
12 | MB85R2001 |
Fujitsu |
Memory FRAM CMOS |