MA4E2501-1290 - Tyco Electronics

MA4E2501-1290 SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

and Applications The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. Th.

Features

• Extremely Low Parasitic Capitance and Inductance
• Extremely Small 0201 (600x300um) Footprint
• Surface Mountable in Microwave Circuits, No Wirebonds Required
• Rugged HMIC Construction with Polyimide Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours)
• Lower Susceptibility to ESD Damage MA4E2501-1290 Series V1 The MA4E2501L-1290 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and l.