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MA4E2501-1290 |
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| Part Number | MA4E2501-1290 |
| Manufacturer | Tyco Electronics |
| Description | and Applications The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consi... |
| Features |
• Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 (600x300um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) • Lower Susceptibility to ESD Damage MA4E2501-1290 Series V1 The MA4E2501L-1290 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and l... |
| Document |
 MA4E2501-1290 Data Sheet
PDF 135.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MA4E2502 |
Tyco Electronics |
Medium and High Barrier Silicon Schottky Diodes |
|
| 2 | MA4E2508 |
Tyco Electronics |
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes |
|
| 3 | MA4E2513-1289 |
Tyco Electronics |
Silicon Schottky Diodes |
|
| 4 | MA4E2514 |
Tyco Electronics |
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes |
|
| 5 | MA4E2532L-1113 |
Tyco Electronics |
SURMOUNT Low & Medium Barrier Silicon Schottky Diodes |
|