M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a s.
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• Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations
Package Outlines
1, 2
MA4E2037
0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6)
Description
M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA4E2037 |
Tyco Electronics |
(MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes | |
2 | MA4E2039 |
Tyco Electronics |
(MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes | |
3 | MA4E2054 |
Tyco |
Surface Mount Low Barrier Schottky Diode | |
4 | MA4E2062 |
Tyco Electronics |
Silicon Schottky Diode Ring Quads | |
5 | MA4E2072 |
Tyco Electronics |
Surface Mount Schottky Crossover Quads | |
6 | MA4E2099-1284 |
Tyco Electronics |
High Barrier Silicon Schottky Diodes | |
7 | MA4E2160 |
MA-COM |
GaAs Flip Chip Schottky Barrier Diodes | |
8 | MA4E2200A1-1141T |
MACOM |
Surface Mount Zero Bias Schottky Diodes | |
9 | MA4E2200B1-287T |
MACOM |
Surface Mount Zero Bias Schottky Diodes | |
10 | MA4E2200D1-287T |
MACOM |
Surface Mount Zero Bias Schottky Diodes | |
11 | MA4E2501-1290 |
Tyco Electronics |
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes | |
12 | MA4E2502 |
Tyco Electronics |
Medium and High Barrier Silicon Schottky Diodes |