SMD Type Schottky Barrier Diodes MA3XD17 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 Features Mini type 3-pin package High breakdown voltage VR = 100 V +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maxim um Ratings Ta = 25 Param eter Reverse voltage (D.
Mini type 3-pin package High breakdown voltage VR = 100 V +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maxim um Ratings Ta = 25 Param eter Reverse voltage (DC) Peak reverse voltage Non-repetitive peak forward surge current (Note 1) Average forward current Junction tem perature Storage tem perature Note 1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) Sym bol VR I RRM I FSM I F(AV) Tj T stg Rating 100 100 1.5 300 125 -55 to+ 150 Unit V V A mA Electrical Characteristics Ta = 25 Para.
Schottky Barrier Diodes (SBD) MA3XD17 Silicon epitaxial planar type Unit : mm For rectification For protection against.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA3XD11 |
Panasonic |
Silicon epitaxial planar type | |
2 | MA3XD11 |
Kexin |
Schottky Barrier Diodes | |
3 | MA3XD14E |
Panasonic |
Silicon epitaxial planar type (cathode common) | |
4 | MA3XD14E |
Kexin |
Schottky Barrier Diodes | |
5 | MA3XD15 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA3XD15 |
Kexin |
Schottky Barrier Diodes | |
7 | MA3XD21 |
Panasonic |
Silicon epitaxial planar type | |
8 | MA3XD21 |
Kexin |
Schottky Barrier Diodes | |
9 | MA3X028 |
Panasonic |
Silicon epitaxial planar type variable resistor | |
10 | MA3X057 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA3X075D |
Panasonic |
Silicon epitaxial planar type | |
12 | MA3X075E |
Panasonic |
Silicon epitaxial planar type |