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SMD Type Schottky Barrier Diodes MA3XD14E SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 Features Mini type 3-pin package Low forward rise voltage VF (VF < 0.4 V) Cathode common type +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maxim um Ratings Ta = 25 P.
Mini type 3-pin package Low forward rise voltage VF (VF < 0.4 V) Cathode common type +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maxim um Ratings Ta = 25 Param eter Reverse voltage (DC) Repetitive peak reverse-voltage Non-repetitive peak forward-surge-current (Note 2) Forward current (DC) Single Double (Note 1) Peak forward current Single Double (Note 1) Junction tem perature Storage tem perature Note 1 : The value for operating one chip 2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repeti.
MA3XD14E - Panasonic
Schottky Barrier Diodes (SBD) MA3XD14E Silicon epitaxial planar type (cathode common) Unit : mm For high-speed switchi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MA3XD11 |
Panasonic |
Silicon epitaxial planar type |
|
| 2 | MA3XD11 |
Kexin |
Schottky Barrier Diodes |
|
| 3 | MA3XD15 |
Panasonic |
Silicon epitaxial planar type |
|
| 4 | MA3XD15 |
Kexin |
Schottky Barrier Diodes |
|
| 5 | MA3XD17 |
Panasonic |
Silicon epitaxial planar type |
|
| 6 | MA3XD17 |
Kexin |
Schottky Barrier Diodes |
|
| 7 | MA3XD21 |
Panasonic |
Silicon epitaxial planar type |
|
| 8 | MA3XD21 |
Kexin |
Schottky Barrier Diodes |
|
| 9 | MA3X028 |
Panasonic |
Silicon epitaxial planar type variable resistor |
|
| 10 | MA3X057 |
Panasonic |
Silicon epitaxial planar type |
|
| 11 | MA3X075D |
Panasonic |
Silicon epitaxial planar type |
|
| 12 | MA3X075E |
Panasonic |
Silicon epitaxial planar type |
|