MA3XD11 - Panasonic

MA3XD11 Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature VR VRRM IF(AV) .

Features

1 MA3XD11 IF  V F 10 Ta = 125°C 1 1.0 Schottky Barrier Diodes (SBD) VF  Ta IR  VR Ta = 125°C 10−1 10−2 Forward voltage VF (V) Forward current IF (A) Reverse current IR (A) 75°C 10−1 10−2 10−3 10−4 10−5 10−6 25°C − 20°C 0.8 10−3 75°C 0.6 10−4 25°C 0.4 IF = 1 A 10−5 0.2 100 mA 10 mA 10−6 0 0.2 0.4 0.6 0.8 1 1.2 0 −40 10−7 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) IR  T a 100 VR = 20 V 10 10 V 5V 1 Reverse current IR (mA) 0.1 0.01 0.001 −40 0 40 80 120 160 200 Ambient te.