Variable Capacitance Diodes MA2S376 Silicon epitaxial planar type Unit : mm For VCO of a UHF radio I Features • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.15 min. 0.15 min. 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 1.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°.
• Small series resistance rD
• SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.15 min.
0.15 min.
0.27 − 0.02
0.8 ± 0.1
+ 0.05
1.3 ± 0.1 1.7 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) Junction temperature Storage temperature VR Tj Tstg 6 150 −55 to +150 V °C °C
0.7 ± 0.1
Parameter
Symbol
Rating
Unit
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: H
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Series resistance
* Symbol IR CD(1V) CD(3V) rD VR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2S372 |
Panasonic |
Silicon epitaxial planar type | |
2 | MA2S374 |
Panasonic |
Silicon epitaxial planar type | |
3 | MA2S377 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA2S304 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA2S331 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA2S357 |
Panasonic |
Silicon epitaxial planar type | |
7 | MA2S367 |
Panasonic |
Silicon epitaxial planar type | |
8 | MA2S077 |
Panasonic |
Silicon epitaxial planar type | |
9 | MA2S111 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA2S728 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA2S784 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA2SD032 |
Panasonic |
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type |