Variable Capacitance Diodes MA2S367 Silicon epitaxial planar type Unit : mm For AFC of UHF and VHF electronic tuner 0.15 min. 0.15 min. I Features • Large capacitance ratio • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 1.7 ± 0.
• Large capacitance ratio
• Small series resistance rD
• SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 − 0.02 0.8 ± 0.1
+ 0.05
1.3 ± 0.1 1.7 ± 0.1
Reverse voltage (DC) Peak reverse voltage Junction temperature Storage temperature
VR VRM Tj Tstg
30 34 150 −55 to +150
V V °C °C
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: P
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(10V) Capacitance ratio Series resistance
* CD(2V)/CD(10V) rD VR = 9 pF, f .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2S304 |
Panasonic |
Silicon epitaxial planar type | |
2 | MA2S331 |
Panasonic |
Silicon epitaxial planar type | |
3 | MA2S357 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA2S372 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA2S374 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA2S376 |
Panasonic |
Silicon epitaxial planar type | |
7 | MA2S377 |
Panasonic |
Silicon epitaxial planar type | |
8 | MA2S077 |
Panasonic |
Silicon epitaxial planar type | |
9 | MA2S111 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA2S728 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA2S784 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA2SD032 |
Panasonic |
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type |