www.DataSheet4U.com Variable Capacitance Diodes MA27V17 Silicon epitaxial planar type For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD 1 0.60±0.05 0.27+0.05 –0.02 2 0.10+0.05 –0.02 Unit: mm 1.00±0.05 1.40±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperat.
• Good linearity and large capacitance-ratio in CD − VR relation
• Small series resistance rD
1 0.60±0.05 0.27+0.05
–0.02 2 0.10+0.05
–0.02
Unit: mm
1.00±0.05
1.40±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C
5˚
0.15 min.
5˚
0 to 0.01
°C
1 : Anode 2 : Cathode SSSMini2-F1 Package
Marking Symbol: L
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance
*
Conditions VR = 5 V V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA27V11 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
2 | MA27V12 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
3 | MA27V15 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
4 | MA27V16 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
5 | MA27V01 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
6 | MA27V02 |
Panasonic Semiconductor |
Variable Capacitance Diodes | |
7 | MA27V03 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
8 | MA27V04 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
9 | MA27V05 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
10 | MA27V07 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
11 | MA27V09 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
12 | MA27111 |
Panasonic |
Silicon epitaxial planar type |