Switching Diodes MA27111 Silicon epitaxial planar type Unit: mm For high-speed switching circuits ■ Features • High-density mounting is possible • Short reverse recovery time trr • Small terminal capacitance Ct 0.27+0.05 –0.02 2 1.00±0.05 1.40±0.05 0.13+0.05 –0.02 1 0.60±0.05 0.15 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maxi.
• High-density mounting is possible
• Short reverse recovery time trr
• Small terminal capacitance Ct
0.27+0.05
–0.02 2 1.00±0.05 1.40±0.05
0.13+0.05
–0.02
1 0.60±0.05 0.15 min.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current
* Junction temperature Storage temperature Note)
*: t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C
5°
5°
0 to 0.01
1: Anode 2: Cathode SSSMini2-F2 Package
Marking Symbol: S
■ Electr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA27D27 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
2 | MA27D29 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
3 | MA27D30 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
4 | MA27V01 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
5 | MA27V02 |
Panasonic Semiconductor |
Variable Capacitance Diodes | |
6 | MA27V03 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
7 | MA27V04 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
8 | MA27V05 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
9 | MA27V07 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
10 | MA27V09 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
11 | MA27V11 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
12 | MA27V12 |
Panasonic Semiconductor |
Silicon epitaxial planar type |