www.DataSheet4U.com Variable Capacitance Diodes MA27V11 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • High frequency type by this low capacitance • Ultraminiature Package 1.0 mm × 0.6 mm (height: 0.52 mm), optimum for high-density mounting and high-speed mounting 0.27+0.05 –0..
• Good linearity and large capacitance-ratio in CD − VR relation
• High frequency type by this low capacitance
• Ultraminiature Package 1.0 mm × 0.6 mm (height: 0.52 mm), optimum for high-density mounting and high-speed mounting
0.27+0.05
–0.02 2
0.10+0.05
–0.02
1.00±0.05
1.40±0.05
1 0.60±0.05 5˚
Parameter Reverse voltage Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 8 125 −55 to +125
Unit V °C °C
0 to 0.01
1: Anode 2: Cathode SSSMini2-F1 Package
Marking Symbol: D
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Symbol IR .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA27V12 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
2 | MA27V15 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
3 | MA27V16 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
4 | MA27V17 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
5 | MA27V01 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
6 | MA27V02 |
Panasonic Semiconductor |
Variable Capacitance Diodes | |
7 | MA27V03 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
8 | MA27V04 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
9 | MA27V05 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
10 | MA27V07 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
11 | MA27V09 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
12 | MA27111 |
Panasonic |
Silicon epitaxial planar type |