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Schottky Barrier Diodes (SBD) MA27D30 Silicon epitaxial planar type Unit: mm For super high speed switching 0.27+0.05 –0.02 0.12+0.05 –0.02 ■ Features • Small reverse current: IR < 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr . 1 1.00±0.05 1.40±0.05 2 ■ Absolute Maximum Ratings Ta = 25°C .
• Small reverse current: IR < 2 µA (at VR = 30 V)
• Optimum for high frequency rectification because of its short reverse recovery time trr .
1 1.00±0.05 1.40±0.05
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
*
0.60±0.05 5°
VR VRRM IF(AV) IFM IFSM Tj Tstg
30 30 100 200 1 125 −55 to +125
V
0 to 0.01
V mA mA A °C °C
1: Anode 2: Cathode SSSMini2-F2 Package
Junction temperature Storage temperature
Marking Symbol: 8N
Note)
* : The peak-to-peak valu.
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|---|---|---|---|---|
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| 7 | MA27V04 |
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| 8 | MA27V05 |
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