M68701 - Mitsubishi

M68701 SILICON MOS FET POWER AMPLIFIER

MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO OUTLINE DRAWING 60.5±1 57.5±0.5 50.4±1 2-R1.6+0.2 0 Dimensions in mm BLOCK DIAGRAM 2 3 1 4 5 1 2 3 4 5 0.45±0.2 8.3±1 21.3±1 43.3±1 51.3±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSO.

Features

itions Limits Min 820 6 35 Max 851 Unit MHz W % dBc - VDD=12.5V, VGG=5V, Pin=1mW ZG=ZL=50Ω, VDD=10-16V, Load VSWR<4:1 VDD=15.2V, Pin=1mW, PO=6W (VGG adjust), ZL=20:1 -30 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 4 3 2 1 ρin ηT PO 100 90 80 VDD=12.5V 70 VGG=5V 60 Pin=1mW ZG=ZL=50Ω 50 40 30 20 10 .