M68701M - Mitsubishi

M68701M Silicon MOS FET Power Amplifier

ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68701M Silicon MOS FET Power Amplifier, 860-915MHz 6W FM /Digital Mobile D im e n s i o n s i n m m O U T L IN E D R A W I N G B L O C K D IAG R A M 60.5 +/-1 57.5 +/-0.5 50.2+/-1 2-R1.6 +0.2 0 11+/-0.5 14+/-0.5 2 3 1 4 5 1 2 phai 0.45 +/-0.2 3 .

Features

C deg. C ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR LOAD VSWR TOLERANCE TEST CONDITIONS LIMITS MIN MAX 860 915 6 35 -30 4 No degradation or destroy UNIT MHz W % dBc - VDD=12.5V,VGG=5V,Pin=1mW VDD=12.5V, Pout=6W (VGG adjust) Pin=1mW VDD=15.2V,Pin=1mW,Po=6W(VGG adjust) ZG=50 ohms, LOAD VSWR=20:1 ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE . Keep safety first in your circuit designs! Mitsubishi Electric Corporation pu.