. . . . . 6 Figure 2. Logic Diagram . . . 7 Table 1. Signal Names . . . .
SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE
– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Asynchronous Random Read
– Asynchronous Address Latch Controlled Read
– Page Read
TSOP56 (N) 14 x 20 mm
s
ACCESS TIME
– Synchronous Burst Read up to 56MHz
– Asynchronous Page Mode Read 110/25ns
– Random Read 110ns
TBGA
s
PROGRAMMING TIME
– 16 Word Write Buffer
– 12µs Word effective programming time
TBGA64 (ZA) 10 x 13 mm
s s s s s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58LW064A |
STMicroelectronics |
64 Mbit Low Voltage Flash Memories | |
2 | M58LW064B |
STMicroelectronics |
64 Mbit Low Voltage Flash Memories | |
3 | M58LW064D |
ST Microelectronics |
64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash Memory | |
4 | M58LW032A |
ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory | |
5 | M58LW032C |
ST Microelectronics |
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory | |
6 | M58LW032D |
ST Microelectronics |
32 Mbit 4Mb x8 / 2Mb x16 / Uniform Block 3V Supply Flash Memory | |
7 | M58LW128A |
ST Microelectronics |
128 Mbit 8Mb x16 or 4Mb x32 / Uniform Block / Burst 3V Supply Flash Memories | |
8 | M58LW128B |
ST Microelectronics |
128 Mbit 8Mb x16 or 4Mb x32 / Uniform Block / Burst 3V Supply Flash Memories | |
9 | M58LW64D |
ST Microelectronics |
64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash Memory | |
10 | M58LR128FB |
ST Microelectronics |
Flash Memory | |
11 | M58LR128FT |
ST Microelectronics |
Flash Memory | |
12 | M58LR128GB |
STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory |