M58LW032D - ST Microelectronics

M58LW032D 32 Mbit 4Mb x8 / 2Mb x16 / Uniform Block 3V Supply Flash Memory

. . . . . 5 Figure 2. Logic Diagram . . . Table 1. Signal Names . . . . .

Features

SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH s Figure 1. Packages SUPPLY VOLTAGE
  – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations s ACCESS TIME
  – Random Read 90ns,110ns
  – Page Mode Read 90ns/25ns, 110ns/25ns TSOP56 (N) 14 x 20 mm s PROGRAMMING TIME
  – 16 Word Write Buffer
  – 12µs Word effective programming time TBGA s 32 UNIFORM 64 KWord/128KByte MEMORY BLOCKS ENHANCED SECURITY
  – Block Protection/ Unprotection
  – VPEN signal for Program Erase Enable
  – 128 bit Protection Register with 64 bit Unique Code in OTP area TBGA64 (ZA) 10 x 13 mm s s s s s PROGRAM and E.