The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S and E2S for the SRAM. The two components are also separately power supplied .
SUMMARY s SUPPLY VOLTAGE
– VDDF = VDDS =1.9V to 2.1V
s s s
Figure 1. Packages
– VPPF = 12V for Fast Program (optional) ACCESS TIME: 85,100ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36DR432C: 00A4h
– Bottom Device Code, M36DR432D: 00A5h
FBGA
FLASH MEMORY s 32 Mbit (2Mb x16) BOOT BLOCK
– Parameter Blocks (Top or Bottom Location)
s
Stacked LFBGA66 (ZA) 8 x 8 ball array
PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
s
ASYNCRONOUS PAGE MODE READ
– Page width: 4 Word
– Page Mode Access Time: 35ns
s
DUAL BANK OPERATION
– Read .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M36DR432A |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
2 | M36DR432B |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
3 | M36DR432C |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
4 | M36DR232 |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
5 | M36D0R6040B0 |
STMicroelectronics |
64-Mbit Flash Memory and 16 Mbit PSRAM | |
6 | M36D0R6040T0 |
STMicroelectronics |
64-Mbit Flash Memory and 16-Mbit PSRAM | |
7 | M3604A |
Intel Corporation |
HIGH-SPEED PROM | |
8 | M3624A |
Intel Corporation |
HIGH-SPEED PROM | |
9 | M3625A |
Intel |
4K PROM | |
10 | M366S0823CT0 |
Samsung Semiconductor |
SDRAM DIMM | |
11 | M366S0823CTF |
Samsung Semiconductor |
SDRAM DIMM | |
12 | M366S0823CTL |
Samsung Semiconductor |
SDRAM DIMM |