. . . . . 4 Figure 2. Logic Diagram . . . . 4 Table 1. Signal Names . . .
SUMMARY
MULTI-CHIP PACKAGE
– 1 die of 64 Mbit (4Mb x 16) Flash Memory
– 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
■ SUPPLY VOLTAGE
– VDDF = VDDP = 1.7V to 1.95V
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration), M36D0R6040T0: 8810h
– Device Code (Bottom Flash Configuration), M36D0R6040B0: 8811h
■ PACKAGE
– Compliant with Lead-Free Soldering Processes
– Lead-Free Versions FLASH MEMORY
■ PROGRAMMING TIME
– 8µs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ MEMORY BLOC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M36D0R6040T0 |
STMicroelectronics |
64-Mbit Flash Memory and 16-Mbit PSRAM | |
2 | M36DR232 |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
3 | M36DR432A |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
4 | M36DR432B |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
5 | M36DR432C |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
6 | M36DR432D |
ST Microelectronics |
32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory | |
7 | M3604A |
Intel Corporation |
HIGH-SPEED PROM | |
8 | M3624A |
Intel Corporation |
HIGH-SPEED PROM | |
9 | M3625A |
Intel |
4K PROM | |
10 | M366S0823CT0 |
Samsung Semiconductor |
SDRAM DIMM | |
11 | M366S0823CTF |
Samsung Semiconductor |
SDRAM DIMM | |
12 | M366S0823CTL |
Samsung Semiconductor |
SDRAM DIMM |