The Samsung M366S0823CTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823CTF consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF decoupling capacitors are mounted on www.DataSheet4U.com the prin.
rmance range Part No. M366S0823CTF-C10
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• Max Freq. (Speed) 66MHz (@ CL=2 & CL=3)
Burst mode operation Auto & self refresh capability (4096 Cycles / 64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil) , Single sided component
PIN CONFIGURATIONS (Front side/back side)
Pin Front 1 2 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M366S0823CT0 |
Samsung Semiconductor |
SDRAM DIMM | |
2 | M366S0823CTL |
Samsung Semiconductor |
SDRAM DIMM | |
3 | M366S0823CTS |
Samsung Semiconductor |
SDRAM DIMM | |
4 | M366S0823DTF |
Samsung Semiconductor |
SDRAM DIMM | |
5 | M366S0823DTS |
Samsung Semiconductor |
SDRAM DIMM | |
6 | M366S0823ETS |
Samsung Semiconductor |
SDRAM DIMM | |
7 | M366S0823FTS |
Samsung Semiconductor |
SDRAM DIMM | |
8 | M366S0824CT0 |
Samsung Semiconductor |
SDRAM DIMM | |
9 | M366S0824CTL |
Samsung Semiconductor |
SDRAM DIMM | |
10 | M366S0824DT0 |
Samsung Semiconductor |
SDRAM DIMM | |
11 | M366S0824ET0 |
Samsung Semiconductor |
SDRAM DIMM | |
12 | M366S0924ETS-C7A |
Samsung semiconductor |
(M3xxSxxxxETx-C7A) SDRAM Unbuffered Module |