Pin Name A0 ~ A11 BA0 ~ BA1 DQ0 ~ DQ63 CB0 ~ CB7 CLK0 ~ 3 CKE0, CKE1 CS0 ~ CS3 RAS CAS WE Select bank Data input/output Check bit (Data-in/data-out) Clock input Clock enable input Chip select input Row address strobe Colume address strobe Write enable Function Address input (Multiplexed) VDD VSS VREF REGE SDA SCL SA0 ~ 2 DU NC Pin Name DQM0 ~ 7 DQM Power sup.
(K4S280832E)
* 9EA 16Mx8(K4S280832E)
*16EA 16Mx8(K4S280832E)
*16EA 16Mx8(K4S280832E)
*18EA 16Mx8(K4S280832E)
*18EA Component Package 54-TSOPII 54-TSOPII 54-TSOPII 54-TSOPII 54-TSOPII 54-TSOPII 54-TSOPII 54-TSOPII 54-TSOPII
SDRAM
Height 1,000mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil
Operating Frequencies
- 7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2
Feature
Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with ad.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M366S3323ETS-C7A |
Samsung semiconductor |
(M3xxSxxxxETx-C7A) SDRAM Unbuffered Module | |
2 | M366S3323CT0-C1H |
Samsung semiconductor |
PC100 Unbuffered DIMM | |
3 | M366S3323CT0-C1L |
Samsung semiconductor |
PC100 Unbuffered DIMM | |
4 | M366S3323CT0-C75 |
Samsung semiconductor |
PC133 Unbuffered DIMM | |
5 | M366S3323FTS-C7A |
Samsung |
SDRAM Unbuffered Module | |
6 | M366S3323FTU-C7A |
Samsung |
SDRAM Unbuffered Module | |
7 | M366S0823CT0 |
Samsung Semiconductor |
SDRAM DIMM | |
8 | M366S0823CTF |
Samsung Semiconductor |
SDRAM DIMM | |
9 | M366S0823CTL |
Samsung Semiconductor |
SDRAM DIMM | |
10 | M366S0823CTS |
Samsung Semiconductor |
SDRAM DIMM | |
11 | M366S0823DTF |
Samsung Semiconductor |
SDRAM DIMM | |
12 | M366S0823DTS |
Samsung Semiconductor |
SDRAM DIMM |