M366S3323CT0-C75 - Samsung semiconductor

M366S3323CT0-C75 PC133 Unbuffered DIMM

The Samsung M366S3323CT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S3323CT0 consists of sixteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board.

Features

ecise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE
• Performance range Part No. M366S3323CT0-C75
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• Max Freq. (Speed) PC133@CL3 & PC100@CL3 Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst lengt.