M366S1654ETS - Samsung semiconductor

M366S1654ETS SDRAM Unbuffered Module

Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 CB0 ~ CB7 CLK0 ~ 3 CKE0, CKE1 CS0 ~ CS3 RAS CAS WE Select bank Data input/output Check bit (Data-in/data-out) Clock input Clock enable input Chip select input Row address strobe Colume address strobe Write enable Function Address input (Multiplexed) VDD VSS VREF REGE SDA SCL SA0 ~ 2 DU NC Pin Name DQM0 ~ 7 DQM Power sup.

Features

64 32M x 64 32M x 64 32M x 72 32M x 72 64M x 64 64M x 64 64M x 72 64M x 72 Component Composition 16Mx16(K4S561632E)
* 4EA 32Mx8(K4S560832E)
* 8EA 32Mx8(K4S560832E)
* 8EA 32Mx8(K4S560832E)
* 9EA 32Mx8(K4S560832E)
* 9EA 32Mx8(K4S560832E)
*16EA 32Mx8(K4S560832E)
*16EA 32Mx8(K4S560832E)
*18EA 32Mx8(K4S560832E)
*18EA 54-TSOP(II) Component Package SDRAM Height 1,000mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil Operating Frequencies 7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2 Feature Burst mode operation Auto & self ref.