The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board .
Performance range Part No. Max Freq. (Speed) M366S1623DT0-C80 125MHz (8ns @ CL=3) M366S1623DT0-C1H 100MHz (10ns @ CL=2) M366S1623DT0-C1L 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect with EEPROM PCB : Height (1,375mil) , double sided componen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M366S1623ET0 |
Samsung semiconductor |
Synchronous DRAMs | |
2 | M366S1654CTS |
Samsung semiconductor |
PC133/PC100 Unbuffered DIMM | |
3 | M366S1654ETS |
Samsung semiconductor |
SDRAM Unbuffered Module | |
4 | M366S1723DTS |
Samsung |
PC133/PC100 Unbuffered DIMM | |
5 | M366S1723ETS-C7A |
Samsung semiconductor |
(M3xxSxxxxETx-C7A) SDRAM Unbuffered Module | |
6 | M366S1723ETU-C7A |
Samsung semiconductor |
(M3xxSxxxxETx-C7A) SDRAM Unbuffered Module | |
7 | M366S1723FTS-C7A |
Samsung |
SDRAM Unbuffered Module | |
8 | M366S1723FTU-C7A |
Samsung |
SDRAM Unbuffered Module | |
9 | M366S0823CT0 |
Samsung Semiconductor |
SDRAM DIMM | |
10 | M366S0823CTF |
Samsung Semiconductor |
SDRAM DIMM | |
11 | M366S0823CTL |
Samsung Semiconductor |
SDRAM DIMM | |
12 | M366S0823CTS |
Samsung Semiconductor |
SDRAM DIMM |