M29W512GH70N3E - Micron

M29W512GH70N3E Parallel NOR Flash Embedded Memory

512Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features • Stacked device (two 256Mb die) • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words or 16 bytes – Page a.

Features

Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features
• Stacked device (two 256Mb die)
• Supply voltage
  – VCC = 2.7
  –3.6V (program, erase, read)
  – VCCQ = 1.65
  –3.6V (I/O buffers)
  – VPPH = 12V for fast program (optional)
• Asynchronous random/page read
  – Page size: 8 words or 16 bytes
  – Page access: 25ns, 30ns
  – Random access: 80ns, 90ns
• Commands sensitive to MSB A24 (die selection)
• Fast program commands: 32-word (64-byte) write buffer
• Enhanced buffered program commands: 256-word
• Program time
  – 16µs per byte/word TYP
  – Single die program time: 10s with VPPH, 16s with.