M29W004T - ST Microelectronics

M29W004T 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organis.

Features

t the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in June 1999 TSOP40 (N) 10 x 20 mm Figure 1. Logic Diagram VCC 19 A0-A18 W E G RP M29W004T M29W00.