. . . . 6 2 Signal descriptions . . . . . 13 2.1 Address inputs (A0-A17) . 13 2.2 Data inputs/outputs (DQ0-DQ7) . . . . . . . .
Supply voltage
– VCC = 2.7 V to 3.6 V for Program, Erase and Read
Access time: 45, 55, 70 ns
Programming time
– 10 μs per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during Erase Suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Elec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M29W400DB |
ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory | |
2 | M29W400DB |
Numonyx |
3V supply Flash memory | |
3 | M29W400B |
ST Microelectronics |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
4 | M29W400BB |
ST Microelectronics |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
5 | M29W400BT |
ST Microelectronics |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
6 | M29W400FB |
Numonyx |
4-Mbit Boot Block 3 V Supply Flash memory | |
7 | M29W400FT |
Numonyx |
4-Mbit Boot Block 3 V Supply Flash memory | |
8 | M29W400T |
ST Microelectronics |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
9 | M29W002BB |
ST Microelectronics |
2 Mbit 256Kb x8 / Boot Block Low Voltage Single Supply Flash Memory | |
10 | M29W002BT |
ST Microelectronics |
2 Mbit 256Kb x8 / Boot Block Low Voltage Single Supply Flash Memory | |
11 | M29W004B |
ST Microelectronics |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory | |
12 | M29W004BB |
ST Microelectronics |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory |