M29W400DB - Numonyx

M29W400DB 3V supply Flash memory

. . . . 6 2 Signal descriptions . . . . . 13 2.1 Address inputs (A0-A17) . 13 2.2 Data inputs/outputs (DQ0-DQ7) . . . . . . . .

Features

„ Supply voltage
  – VCC = 2.7 V to 3.6 V for Program, Erase and Read „ Access time: 45, 55, 70 ns „ Programming time
  – 10 μs per byte/word typical „ 11 memory blocks
  – 1 boot block (top or bottom location)
  – 2 parameter and 8 main blocks „ Program/Erase controller
  – Embedded byte/word program algorithms „ Erase Suspend and Resume modes
  – Read and Program another block during Erase Suspend „ Unlock bypass program command
  – Faster production/batch programming „ Temporary block unprotection mode „ Low power consumption
  – Standby and Automatic Standby „ 100,000 Program/Erase cycles per block „ Elec.