M29W008DT - ST Microelectronics

M29W008DT 8 Mbit 3V Supply Flash Memory

. . . . . 5 Table 1. Figure 2. Figure 3. Figure 4. Figure 5. Signal Names . . . . 5 Logic diagram . . . . . .

Features

SUMMARY
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■ SUPPLY VOLTAGE
  – 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10µs per Byte typical PROGRAM/ERASE CONTROLLER (P/E.C.)
  – Embedded Byte Program Algorithm
  – Status Register bits and Ready/Busy Output 19 MEMORY BLOCKS
  – 1 Boot Block (Top or Bottom location)
  – 2 Parameter and 16 Main Blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTIPLE BLOCK PROTECTION/ TEMPORARY UNPROTECTION MODE ERASE SUSPEND and RESUME MODES LOW POWER CONSUMPTION
  – Standby and Automatic Standby modes 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RET.