M106 - Siliconix

M106 Dual P-channel MOSFET

dual enhancement-type -~ g - p-channel MOSFETs des.•gned t~ or... Performance Curves MACA MACB MACC See Section 4 ~ o.... • Analog Switches • Differential Amplifiers • Impedance Converters BENEFITS • High Input Impedance at High Temp- -~ o erature 00 IGSS =30 pA Typical, T = 125°C (M108) • High Off-Isolation ID(off) = 200 pA Maximum Ml06 TO-9.

Features

, NO Bono':: V". S, ° 0, ' NO S, BOTTOM VIEW G1 07 S2 0, 0, 0 8 NC S, BOTTOM VIEW ELECTRICAL CHARACTERISTICS (25'C unless otherwise noted) Characteristic 1 BVOSS Drain-Source Breakdown Voltage I, BVSDS Source-Drain Breakdown Voltage I,14~ 15 A I1. T BVGBS IGSS IO(off} IS~off} Gate-Body Breakdown Voltage Gate-Body Leakage Drain Cutoff Current Source Cutoff Current I.7~ VGS(th) Gate Threshold Voltage 9' 10 10(on) Dram Current rDS(on) Dram Source ON Resistance 11 91, 0 12 y Cg, ON "_""1M 4 A Cgd C,b 15 I -c Cdb 16 Cd, Common-Source Forward Transconductance Gate-Sour.