M100 - Siliconix

M100 n-channel MOSFET

depletion-type H n-channel MOSFETs designed for • • • Performance Curves MA See Section 4 • Small-Signal Amplifiers • Ultra-High Input Impedance Amplifiers Electrometers Smoke Detectors pH Meters • Low-Level Chopper Amplifiers BENEFITS • Insignificant Loading in High Impedance Circuits RIN> 1015 n • Minimum Error in Low-Level Choppers rDS(on) < 100 n (.

Features

°C unless otherwise noted) Characteristic Min 1 2" -S 3T "4 A -'-T 5I "G c "1 BVDSX Drain-Source Breakdown Voltage VGS(off) Gate-Source Cutoff Voltage IDSS Saturation Drain Current ID(oll) 'GS Drain Cutoff Current Common-Source Parallel Input Resistance 'DSlon) Drain-Source ON Resistance 20 1.5 1013 B 0 Qts 1-1 y 9 N Ciss Common-Source Forward Transconductance Common-Source Input Capacitance 1.000 Ml00 TV. Max -5 Min 20 4.5 4.0 1016 1 1013 350 150 4.000 1.500 3.0 7.5 Ml0l Unit TV. Max Test Conditions V IDol JJA. VGS ° -10 V -8 VDS - 10V.ID -I JJA 12.0 rnA VDsol0V.V.