M1008204 - Renesas

M1008204 Serial MRAM Memory

Mxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile with 1016 write cycles endurance and greater than 20-year retention @85°C. MRAM is a true random-acc.

Features

 Interface
• Serial Peripheral Interface QSPI (4-4-4)
• Single Data Rate Mode: 108MHz
• Double Data Rate Mode: 54MHz
 Technology
• 40nm pMTJ STT-MRAM
• Data Endurance: 1016 write cycles
• Data Retention: 20 years @ 85°C
 Density
• 4Mb, 8Mb, 16Mb
 Operating Voltage Range
• VCC: 1.71V
  – 2.00V
• VCC: 2.70V
  – 3.60V
 Operating Temperature Range
• Industrial: -40°C to 85°C
• Industrial Plus: -40°C to 105°C
 Packages
• 8-pad DFN (WSON) (5.0mm x 6.0mm)
• 8-pin SOIC (5.2mm x 5.2mm)
 Data Protection
• Hardware Based: Write Protect Pin (WP#)
• Software Based: Address Range Selectable through Confi.