-:e enhancement-type p-channel MOSFET H designed for • • • Performance Curves MT See Section 4 • Analog Switches • Digital Switching BENEFITS • High Off-Isolation IO(off) < 100 pA IS(off) < 100 pA • Very High Input Impedance Cgs < 0.5 pF IGSS < 100 pA • Rugged Zener Protected Input ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Source Voltage ...............
cteristic
I"":"
12 1..2 S
~T
5A -T ~I
....!...C
BVDSS BVSOS BVGBS IGSS 1010tl) ISlottl VGSlthl
Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Gate-Body Breakdown Voltage Gate-Body Leakage Drain Cutoff Current Source Cutoff Current Gate Threshold Voltage
~ rDS(on)
9
,..,10 Cgs
_ D Cgd
12 Y Csb
1- 3 N Cdb
Drain Source ON Resistance
Gate-Source Capacitance Gate-Drain Capacitance Source
·Body Capacitance Drain-Body Capacitance
14 Cds
Drain-Source Capacitance
Min -30 -30
~30
-3
TVp
Max Unit
Unit Conditions
10=-lpA.VGS=VBS=0
V
IS=~l pA, VGO=VBO=O
~90
IG = ~10pA, VSB = V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M100 |
Siliconix |
n-channel MOSFET | |
2 | M1004204 |
Renesas |
Serial MRAM Memory | |
3 | M1008 |
Unisonic Technologies |
16-BIT CCD/CIS ANALOG SIGNAL PROCESSOR | |
4 | M1008204 |
Renesas |
Serial MRAM Memory | |
5 | M100A |
General Semiconductor |
GENERAL PURPOSE PLASTIC RECTIFIER | |
6 | M100A |
Sunmate |
AXIAL LEADED SILICON RECTIFIER DIODES | |
7 | M100A |
Vishay |
General Purpose Plastic Rectifier | |
8 | M100B |
General Semiconductor |
GENERAL PURPOSE PLASTIC RECTIFIER | |
9 | M100B |
Sunmate |
AXIAL LEADED SILICON RECTIFIER DIODES | |
10 | M100B |
Vishay |
General Purpose Plastic Rectifier | |
11 | M100D |
General Semiconductor |
GENERAL PURPOSE PLASTIC RECTIFIER | |
12 | M100D |
Sunmate |
AXIAL LEADED SILICON RECTIFIER DIODES |