AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial w.
♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency
LP6836P70
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DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.
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ELECTRICAL SPECIFICATIONS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LP6836P100 |
Filtronic Compound Semiconductors |
Packaged 0.25W Power PHEMT | |
2 | LP6836 |
Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT | |
3 | LP6836SOT343 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT | |
4 | LP6872 |
Filtronic Compound Semiconductors |
0.5W POWER PHEMT | |
5 | LP6872P100 |
Filtronic Compound Semiconductors |
Packaged 0.5W Power PHEMT | |
6 | LP6-EWN1-03-N3 |
Cree |
SMD LED | |
7 | LP6-EWN1-03-N3-MT |
Marktech Optoelectronics |
6.0x5.0mm Tri-Chip Surface Mount LEDs | |
8 | LP6002 |
Link-PP |
10Base-T Isolation Transformers | |
9 | LP60100100F |
EEMB |
Lithium Iron Phosphate Battery | |
10 | LP6062NL |
Link-PP |
Gigabit Transformer | |
11 | LP61L1008 |
AMIC Technology |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM | |
12 | LP61L1008A |
AMIC Technology |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM |