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LP6836P70 |
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| Part Number | LP6836P70 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic ra... |
| Features |
♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency
LP6836P70
• DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers. • ELECTRICAL SPECIFICATIONS... |
| Document |
 LP6836P70 Data Sheet
PDF 59.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP6836P100 |
Filtronic Compound Semiconductors |
Packaged 0.25W Power PHEMT |
|
| 2 | LP6836 |
Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT |
|
| 3 | LP6836SOT343 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 4 | LP6872 |
Filtronic Compound Semiconductors |
0.5W POWER PHEMT |
|
| 5 | LP6872P100 |
Filtronic Compound Semiconductors |
Packaged 0.5W Power PHEMT |
|