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AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 720 µ m Schottky barrier gate. The reces.
♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x)
LP6872
GATE BOND PAD (2X)
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DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 720 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes para.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LP6872P100 |
Filtronic Compound Semiconductors |
Packaged 0.5W Power PHEMT |
|
| 2 | LP6836 |
Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT |
|
| 3 | LP6836P100 |
Filtronic Compound Semiconductors |
Packaged 0.25W Power PHEMT |
|
| 4 | LP6836P70 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 5 | LP6836SOT343 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 6 | LP6-EWN1-03-N3 |
Cree |
SMD LED |
|
| 7 | LP6-EWN1-03-N3-MT |
Marktech Optoelectronics |
6.0x5.0mm Tri-Chip Surface Mount LEDs |
|
| 8 | LP6002 |
Link-PP |
10Base-T Isolation Transformers |
|
| 9 | LP60100100F |
EEMB |
Lithium Iron Phosphate Battery |
|
| 10 | LP6062NL |
Link-PP |
Gigabit Transformer |
|
| 11 | LP61L1008 |
AMIC Technology |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM |
|
| 12 | LP61L1008A |
AMIC Technology |
128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM |
|