LP1500P100 - Filtronic Compound Semiconductors

LP1500P100 PACKAGED 1W POWER PHEMT

AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistanc.

Features

♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency LP1500P100
• DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable.