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LP1500P100 |
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| Part Number | LP1500P100 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500... |
| Features |
♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency
LP1500P100
• DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable... |
| Document |
 LP1500P100 Data Sheet
PDF 48.47KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LP1500 |
Filtronic Compound Semiconductors |
1W POWER PHEMT |
|
| 2 | LP1500SOT223 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 3 | LP1500SOT2231 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 4 | LP1500SOT2232 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 5 | LP1500SOT2233 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
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